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Demand for NAND flash memory continues
to rise dramatically, propelled by an insatiable demand
for consumer gadgetry, including computerized devices,
cellular telephones, portable music players, digital
video appliances, and car navigation systems. And, the
geometric bit growth and multi level cell technology in
data flash drives longer test times while the consumer
market drives a commodity price point, demanding further
reductions in the overall cost of test. The T5761 memory
test system answers these calls with significant
reductions in test time, and with its 512-device
parallel test capability, per-site architecture, Error
Code Correction (ECC), and real-time test programming
functionality, the system also affords greatly reduced
test costs.
Improving throughput with 512-device
parallel test and ECC
With its per-site architecture, which allows testing of
2 DUTs NAND flash memories in parallel within a site,
the T5761 provides the capability to parallel-test up to
512 devices. As a result, test can be performed
independently for each device, and at a high rate of
throughput. This model's support for ECC, a device
feature previously difficult to support without
significant test time impact , provides for shorter test
times, along with significantly improved yields. Real
time ECC support is a must for the shrinking geometry
and bit density of newer NAND Flash.
A compact engineering station
The T5761ES (Engineering Station) brings cost reduction
capabilities to test program development and evaluation
of small quantities of devices.
The T5761ES offers the performance and functionality of
the T5761, but within a compact form factor. With this
engineering station, device evaluation and the
deployment of test programs into volume-production is
now simplified.
Using FutureSuiteŽ, with
multi-language support
FutureSuite allows program development and
evaluation/analysis making maximal use of per-site
architecture. It delivers full coverage extending from
the design stage through volume production. Also,
FutureSuite, with its multi-language support, enables
the user to program either in the C-based MCI (Macro
Control Interface) language or in ATL, providing a
compatible syntax to the industry's most common memory
platforms.
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